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 BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Rev. 01 -- 21 April 2010 Product data sheet
1. Product profile
1.1 General description
The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and superior performance up to 2700 MHz. Its power saving features include easy quiescent current adjustment enabling class-AB operation and logic-level shutdown control to reduce the supply current to 4 A.
1.2 Features and benefits
400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 25 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 3.3 V or 5 V single supply operation All pins ESD protected
1.3 Applications
Wireless infrastructure (base station, repeater, backhaul systems) Broadband CPE/MoCA Industrial applications E-metering Satellite Master Antenna TV (SMATV) WLAN/ISM/RFID
1.4 Quick reference data
Table 1. Quick reference data Input and output impedances matched to 50 , SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 130 mA; Tcase = 25 C; unless otherwise specified. Symbol Parameter ICC f Gp PL(1dB) IP3O
[1] [2] [3]
Conditions VCC = 5.0 V f = 2140 MHz f = 2140 MHz f = 2140 MHz
[3] [1] [2]
Min 50 400
Typ -
Max 170 17.5
Unit mA dB dBm dBm
supply current frequency power gain output power at 1 dB gain compression output third-order intercept point
2700 MHz
14.5 16
23.5 24.5 34.5 37.5 -
The supply current is adjustable; see Section 8.1 "Supply current adjustment". Operation outside this range is possible but not guaranteed. PL = 11 dBm per tone; spacing = 1 MHz.
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
2. Pinning information
2.1 Pinning
terminal 1 index area
n.c. VCC(RF) VCC(RF) n.c.
1 2
8 7
ICQ_ADJ RF_IN SHDN VCC(BIAS)
BGA7124
3 4 GND PAD 6 5
014aab046
Transparent top view
Fig 1.
HVSON8 package pin configuration
2.2 Pin description
Table 2. Symbol n.c. VCC(RF) VCC(BIAS) SHDN RF_IN ICQ_ADJ GND
[1] [2] [3]
Pin description Pin 1, 4 2, 3 5 6 7 8 GND pad Description not connected RF output for the power amplifier and DC supply input for the RF transistor collector [1] bias supply voltage [2] shutdown control function enabled/disabled RF input for the power amplifier [1] quiescent collector current adjustment controlled by an external resistor RF and DC ground[3]
This pin is DC-coupled and requires an external DC-blocking capacitor. RF decoupled. The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3. Ordering information Name BGA7124 HVSON8 Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm Version SOT908-1 Type number Package
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
4. Functional diagram
VCC
VCC(BIAS) 5
ICQ_ADJ 8
R2
SHDN 6
BIAS ENABLE
BANDGAP
V/I CONVERTER
R1
INPUT MATCH
RF_IN 7
2, 3 VCC(RF)
RF_OUT OUTPUT MATCH
GND
014aab047
Fig 2.
Functional diagram
5. Shutdown control
Table 4. Mode Idle TX Shutdown control settings Mode description medium power MMIC fully off; minimal supply current Function description shutdown control enabled Pin SHDN 0 1 Vctrl(sd) (V) Min 0 2.5 Max 0.7 Ictrl(sd) (A) Min Max 2 9
medium power MMIC transmit mode shutdown control disabled
VCC(BIAS) -
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
6. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC(RF) VCC(BIAS) ICC Vctrl(sd) Pi(RF) Tcase Tj VESD Parameter RF supply voltage bias supply voltage supply current shutdown control voltage RF input power case temperature junction temperature electrostatic discharge voltage Human Body Model (HBM); According JEDEC standard 22-A114E Charged Device Model (CDM); According JEDEC standard 22-C101B
[1] [2] [3] See Figure 3 for safe operating area. The supply current is adjustable; see Section 8.1 "Supply current adjustment". If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged. To prevent this, it is recommended that the Ictrl(sd) is limited to 20 mA. If the SHDN function is not used, the SHDN pin should be connected to the VCC(BIAS) pin.
Conditions
[1] [1] [1][2] [3]
Min 50 0.0 -40 -
Max 6.0 6.0 200 VCC(BIAS) 20 +85 150 2000 500
Unit V V mA V dBm C C V V
250 ICC (mA) 200
014aab048
150
100
50 2 3 4 5 6 7 VCC(RF) (V)
Exceeding the safe operating area limits may cause serious damage to the product. The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account. The product-spread on ICC should be taken into account (see Section 8 "Static characteristics").
Fig 3.
BGA7124 DC safe operating area
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
7. Thermal characteristics
Table 6. Symbol Rth(j-mb)
[1]
Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Tcase = 85 C; VCC = 5 V; ICC = 130 mA
[1]
Typ Max Unit 32 K/W
defined as thermal resistance from junction to GND paddle.
8. Static characteristics
Table 7. Characteristics Input and output impedances matched to 50 , pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 3.3 V or VCC = 5 V; Tcase = 25 C; unless otherwise specified. Symbol Parameter ICC supply current Conditions VCC = 3.3 V R1 = 0 ; R2 = 1330 R1 = 2.2 ; R2 = 1070 VCC = 5.0 V R1 = 0 ; R2 = 1960 R1 = 2.2 ; R2 = 1650 during shutdown; pin SHDN = LOW (shutdown enabled)
[1] [2]
[1] [2] [2] [1] [2] [2]
Min 50 115 135 50 110 125 -
Typ 130 160 130 150 4
Max 200 145 185 170 150 175 6
Unit mA mA mA mA mA mA A
The supply current is adjustable; see Section 8.1 "Supply current adjustment". See Section 12 "Application information".
8.1 Supply current adjustment
The supply current can be adjusted by changing the value of external ICQ resistor (R2); (see Figure 4).
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
170 ICC (mA) 130
014aab049
200 ICC (mA) 170
014aab050
140 VCC = 5 V; R1 = 0 VCC = 3.3 V; R1 = 0 110 90 80
50 1.6
2.0
2.4
2.8
3.2
3.6
4.0 4.4 R2 (k)
50 0.9
1.4
1.9
2.4
2.9 3.4 R2 (k)
a. 5 V supply voltage. Fig 4. Supply current as a function of the value of R2
b. 3.3 V supply voltage
9. Dynamic characteristics
Table 8. Characteristics at VCC = 5 V Input and output impedances matched to 50 , pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 130 mA; Tcase = 25 C; see Section 12 "Application information"; unless otherwise specified. Symbol f Gp Parameter frequency power gain for small signals f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz PL(1dB) output power at 1 dB gain compression f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz IP3O output third-order intercept point f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz NF noise figure f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz
[2] [3] [3] [3] [2][3] [4] [4] [4] [2][4] [2]
Conditions
[1]
Min 400 14.5 23.5 34.5 -
Typ 22.7 16.4 16.0 14.2 25.0 24.5 24.5 23.5 38.5 38.0 37.5 36.0 5.2 4.6 4.8 5.4
Max 2700 17.5 6.5 -
Unit MHz dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB dB
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 8. Characteristics at VCC = 5 V ...continued Input and output impedances matched to 50 , pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 130 mA; Tcase = 25 C; see Section 12 "Application information"; unless otherwise specified. Symbol RLin Parameter input return loss Conditions f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz RLout output return loss f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz
[1] [2] [3] [4] Operation outside this range is possible but not guaranteed. ICC = 150 mA; see Section 12 "Application information". PL = 11 dBm per tone; spacing = 1 MHz. Defined at Pi = -40 dBm; small signal conditions.
[2] [2]
Min -
Typ -15 -11 -17 -13 -8 -12 -15 -25
Max -
Unit dB dB dB dB dB dB dB dB
BGA7124_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 9. Characteristics at VCC = 3.3 V Input and output impedances matched to 50 , pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 3.3 V; ICC = 130 mA; Tcase = 25 C, see Section 12 "Application information"; unless otherwise specified. Symbol f Gp Parameter frequency power gain for small signals f = 940 MHz f = 2445 MHz PL(1dB) IP3O NF RLin RLout output power at 1 dB gain compression f = 940 MHz f = 2445 MHz output third-order intercept point noise figure input return loss output return loss f = 940 MHz f = 2445 MHz f = 940 MHz f = 2445 MHz f = 940 MHz f = 2445 MHz f = 940 MHz f = 2445 MHz
[1] [2] [3] [4] Operation outside this range is possible but not guaranteed. ICC = 160 mA; see Section 12 "Application information". PL= 11 dBm per tone; spacing = 1 MHz. Defined at Pi = -40 dBm; small signal conditions.
[2] [2] [2] [3] [2][3] [4] [2][4] [2]
Conditions
[1]
Min 400 -
Typ 22.5 13.8 23.5 22.0 36.4 35.2 5.5 5.5 -15 -10 -9 -25
Max 2700 -
Unit MHz dB dB dBm dBm dBm dBm dB dB dB dB dB dB
BGA7124_1
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Product data sheet
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BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
9.1 Scattering parameters
Table 10. Scattering parameters at 5 V, MMIC only VCC = 5 V; ICC = 130 mA; Tcase = 25 C. f (MHz) s11 Magnitude (ratio) 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 0.85 0.90 0.90 0.89 0.88 0.87 0.87 0.87 0.87 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.85 Angle (degree) 161.56 159.44 152.15 145.75 139.33 133.19 127.07 120.67 114.18 107.68 100.86 94.14 87.48 80.83 74.14 67.39 60.70 53.97 47.78 41.57 35.43 29.74 24.79 19.58 s21 Magnitude (ratio) 22.94 11.82 9.98 8.59 7.55 6.74 6.14 5.61 5.19 4.82 4.51 4.23 3.99 3.77 3.56 3.37 3.19 3.02 2.85 2.69 2.54 2.39 2.27 2.15 Angle (degree) 82.35 82.58 73.86 66.00 58.86 51.66 45.11 38.20 31.60 25.08 18.49 11.74 5.25 -1.50 -8.13 -14.94 -21.68 -28.68 -35.14 -41.70 -48.11 -54.19 -60.06 -66.14 s12 Magnitude (ratio) 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 Angle (degree) 17.02 27.08 24.10 21.41 18.47 14.00 11.25 7.99 4.20 0.31 -4.01 -8.65 -13.15 -18.16 -23.28 -28.54 -33.68 -39.37 -44.84 -50.27 -55.62 -60.71 -65.48 -70.66 s22 Magnitude (ratio) 0.46 0.63 0.64 0.64 0.65 0.65 0.65 0.65 0.64 0.64 0.63 0.63 0.63 0.62 0.62 0.62 0.63 0.63 0.63 0.64 0.64 0.65 0.65 0.66 Angle (degree) -156.50 176.13 169.61 164.34 159.29 154.44 149.58 144.25 139.60 134.85 130.13 125.02 120.13 114.98 109.78 104.46 99.01 93.58 88.17 83.06 78.10 73.31 68.64 64.16
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 11. Scattering parameters at 3.3 V, MMIC only VCC = 3.3 V; ICC = 130 mA; Tcase = 25 C. f (MHz) s11 Magnitude (ratio) 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 0.84 0.91 0.90 0.90 0.89 0.88 0.88 0.87 0.87 0.87 0.87 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.85 0.85 0.85 Angle (degree) 161.94 159.25 151.98 145.57 139.18 132.87 126.78 120.46 113.94 107.48 100.69 93.93 87.28 80.71 74.00 67.27 60.64 53.84 47.60 41.43 35.35 29.64 24.72 19.59 s21 Magnitude (ratio) 21.25 11.56 9.67 8.29 7.26 6.48 5.90 5.39 4.97 4.62 4.32 4.05 3.81 3.61 3.40 3.22 3.05 2.89 2.72 2.57 2.42 2.28 2.16 2.04 Angle (degree) 73.81 79.01 70.71 63.37 56.54 49.74 43.30 36.53 30.05 23.62 17.15 10.48 4.05 -2.66 -9.21 -15.97 -22.71 -29.68 -36.12 -42.66 -49.01 -55.12 -60.91 -66.91 s12 Magnitude (ratio) 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 Angle (degree) 17.66 28.15 24.80 21.89 19.04 15.35 11.89 8.33 4.50 0.35 -3.92 -8.62 -13.28 -18.26 -23.51 -28.87 -34.22 -39.95 -45.44 -51.06 -56.53 -61.72 -66.76 -71.84 s22 Magnitude (ratio) 0.57 0.65 0.66 0.66 0.66 0.66 0.66 0.66 0.65 0.65 0.64 0.64 0.64 0.64 0.64 0.63 0.64 0.64 0.64 0.65 0.65 0.66 0.66 0.67 Angle (degree) -154.41 178.05 171.32 165.59 160.37 155.28 150.23 144.88 140.03 135.35 130.48 125.46 120.31 115.13 109.99 104.66 99.36 93.93 88.55 83.38 78.44 73.56 68.80 64.30
10. Reliability information
Table 12. HTOL Reliability Intrinsic failure rate 4 According JESD85; confidence level 60 %; Tj = 55 C; activation energy = 0.7 eV; acceleration factor determined according Arrhenius Life test Conditions
11. Moisture sensitivity
Table 13. Moisture sensitivity level Class 1 Test methodology JESD-22-A113
BGA7124_1
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BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
12. Application information
12.1 5 V applications
12.1.1 920 MHz to 960 MHz
R1 C8
J3
VCC
C10 C9 C7
VCC(BIAS)
50 J1 C2 C3 MSL1 C1 MSL2 MSL3
L2
RF_IN
VCC(RF)
MSL4
L1
MSL5
MSL6
MSL7
C6
MSL8
50 J2
RF_OUT
BGA7124
ICQ_ADJ
R2
C4
C5
SHDN
enable
014aab051
See Table 14 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 5.
5 V/130 mA application schematic; 920 MHz to 960 MHz
30 PL(1dB) (dBm) 28
014aab052
28 Gp (dB) 26
014aab053
(1)
26
(2)
24
(1) (2)
24
(3)
22
(3)
22
20
20 0.92
0.93
0.94
0.95 f (GHz)
0.96
18 0.92
0.93
0.94
0.95 f (GHz)
0.96
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 6.
Output power at 1 dB gain compression as a function of frequency
Fig 7.
Power gain as a function of frequency
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
0 RLin, RLout, ISL (dB) RLout -10 RLin
014aab054
42 IP3O (dBm) 40
014aab055
(1)
(2) (3)
-20
38
ISL -30 0.92 0.93 0.94 0.95 f (GHz) 0.96 36 0.92 0.93 0.94 0.95 f (GHz) 0.96
Tcase = 25 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 8.
Input return loss, output return loss and isolation as a function of frequency
Fig 9.
Output third-order intercept point as a function of frequency
ena ble
GND
GND
GND
VCC
n.c.
J3
C9 R1 C8 J1 MSL2 C10 L1 MSL1 C1 C2 C3 MSL3 C4 C5 J I HGF EDCBA 1 2 3 4 5 6 7 8 9 10 12 MSL4 MSL5 11 13 C7 MSL6 MSL7 L2 C6 MSL8 J2
RF in
RF out
R2
014aab056
See Table 14 for a list of components.
Fig 10. 5 V/130 mA application reference board; 920 MHz to 960 MHz
BGA7124_1
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Product data sheet
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BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 14. 5 V/130 mA application list of components; 920 MHz to 960 MHz See Figure 5 and Figure 10 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component C1, C6 C2, C3 C4 C5 C7 C8 C9 C10 J1, J2 J3 L1 L2 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] MSL6[1] MSL7[1] MSL8[1] R1 R2 Description capacitor capacitor capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor inductor micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline resistor resistor (trimmer) Value 68 pF 3.3 pF 3.9 pF 1.0 pF 68 pF 100 nF 10 F 12 pF SMA 6-pins 2.2 nH 22 nH 1.14 mm x 0.8 mm x 10.95 mm 1.14 mm x 0.8 mm x 2.95 mm 1.14 mm x 0.8 mm x 7.75 mm 1.14 mm x 0.8 mm x 23.4 mm 1.14 mm x 0.8 mm x 2.2 mm 1.14 mm x 0.8 mm x 3.15 mm 1.14 mm x 0.8 mm x 2.3 mm 1.14 mm x 0.8 mm x 10.95 mm 0 2 k bias adjustment output match DC feed input match input match input match output match output match output match output match output match Multicomp MC 0.063W 0603 0R Bourns 3214W-1-202E Function DC blocking input match output match output match RF decoupling DC decoupling DC decoupling noise decoupling Remarks Murata GRM1885C1H680JA01D Murata GRM1885C1H3R3CZ01D Murata GRM1885C1H3R9CZ01D Murata GRM1885C1H1R0CZ01D Murata GRM1885C1H680JA01D AVX 0603YC104KAT2A AVX 1206ZG106ZAT2A Murata GRM1555C1H120JZ01D Emerson Network Power 142-0701-841 MOLEX Tyco electronics 36501J2N2JTDG Tyco electronics 36501J022JTDG
[1]
MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L).
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
12.1.2 1930 MHz to 1990 MHz
R1 C6
VCC
J3
C7
C5
VCC(BIAS)
50 J1 C2 MSL1 C1 MSL2
L1
RF_IN
VCC(RF)
MSL3
MSL4
MSL5
C4
MSL6
50 J2
RF_OUT
BGA7124
ICQ_ADJ
R2
C3
SHDN
enable
014aab057
See Table 15 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 11. 5 V/130 mA application schematic; 1930 MHz to 1990 MHz
30 PL(1dB) (dBm) 28
014aab058
20 Gp (dB) 18
(1) (2)
014aab059
(1)
26
(2)
16
(3)
24
(3)
14
22
12
20 1.93
1.95
1.97 f (GHz)
1.99
10 1.93
1.95
1.97 f (GHz)
1.99
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 12. Output power at 1 dB gain compression as a function of frequency
Fig 13. Power gain as a function of frequency
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
0 RLin, RLout, ISL (dB)
014aab060
40 IP3O (dBm)
014aab061
(2) (1)
-10
RLout RLin
38
(3)
-20 ISL
36
-30 1.93
1.95
1.97 f (GHz)
1.99
34 1.93
1.95
1.97 f (GHz)
1.99
Tcase = 25 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 14. Input return loss, output return loss and isolation as a function of frequency
Fig 15. Output third-order intercept point as a function of frequency
enable
GND
GND
GND
VCC
n.c.
J3
C7 R1 C6 J1 C5 MSL4 MSL5 L1 MSL1 C1 MSL2 C2 J I HGF EDCBA MSL3 C3 1 2 3 4 5 6 7 8 9 10 12 11 13 C4 MSL6 J2
RF in
RF out
R2
014aab062
See Table 15 for a list of components.
Fig 16. 5 V/130 mA application reference board; 1930 MHz to 1990 MHz
BGA7124_1
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Product data sheet
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NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 15. 5 V/130 mA application list of components; 1930 MHz to 1990 MHz See Figure 11 and Figure 16 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component C1, C4 C2 C3 C5 C6 C7 J1, J2 J3 L1 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] MSL6[1] R1 R2
[1]
Description capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline resistor
Value 15 pF 2.2 pF 1.2 pF 15 pF 100 nF 10 F SMA 6-pins 22 nH 1.14 mm x 0.8 mm x 10.95 mm 1.14 mm x 0.8 mm x 10.8 mm 1.14 mm x 0.8 mm x 5.8 mm 1.14 mm x 0.8 mm x 2.2 mm 1.14 mm x 0.8 mm x 3.7 mm 1.14 mm x 0.8 mm x 10.95 mm 0
Function DC blocking input match output match RF decoupling DC decoupling DC decoupling
Remarks Murata GRM1885C1H150JA01D Murata GRM1885C1H2R2CZ01D Murata GRM1885C1H1R2CZ01D Murata GRM1885C1H150JA01D AVX 0603YC104KAT2A AVX 1206ZG106ZAT2A Emerson Network Power 142-0701-841 MOLEX
DC feed input match input match output match output match output match output match
Tyco electronics 36501J022JTDG
Multicomp MC 0.063W 0603 0R bias adjustment Bourns 3214W-1-202E
resistor (trimmer) 2 k
MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L).
12.1.3 2110 MHz to 2170 MHz
R1 C6
J3
VCC
C7 C5
VCC(BIAS)
50 J1 C2 MSL1 C1 MSL2
L1
RF_IN
VCC(RF)
MSL3
MSL4
MSL5
C4
MSL6
50 J2
RF_OUT
BGA7124
ICQ_ADJ
R2
C3
SHDN
014aab063
enable
See Table 16 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 17. 5 V/130 mA application schematic; 2110 MHz to 2170 MHz
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
16 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
30 PL(1dB) (dBm) 28
014aab064
20 Gp (dB) 18
(1) (2)
014aab065
26
(1) (2)
16
(3)
24
(3)
14
22
12
20 2.11
2.13
2.15 f (GHz)
2.17
10 2.11
2.13
2.15 f (GHz)
2.17
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 18. Output power at 1 dB gain compression as a function of frequency
Fig 19. Power gain as a function of frequency
0 RLin, RLout, ISL (dB)
014aab066
40 IP3O (dBm)
014aab067
-10 RLout RLin -20 ISL
38
(3) (2) (1)
36
-30 2.11
2.13
2.15 f (GHz)
2.17
34 2.11
2.13
2.15 f (GHz)
2.17
Tcase = 25 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 20. Input return loss, output return loss and isolation as a function of frequency
Fig 21. Output third-order intercept point as a function of frequency
BGA7124_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
17 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
enable
GND
GND
GND
VCC
n.c.
J3
C7 R1 C6 J1 C5 MSL4 MSL5 L1 MSL1 C1 MSL2 C2 J I HGF EDCBA MSL3 C3 1 2 3 4 5 6 7 8 9 10 12 11 13 C4 MSL6 J2
RF in
RF out
R2
014aab068
See Table 16 for a list of components.
Fig 22. 5 V/130 mA application reference board; 2110 MHz to 2170 MHz Table 16. 5 V/130 mA application list of components; 2110 MHz to 2170 MHz See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component Description C1, C4 C2 C3 C5 C6 C7 J1, J2 J3 L1 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor micro stripline micro stripline micro stripline micro stripline micro stripline Value 15 pF 2.7 pF 1.5 pF 15 pF 100 nF 10 F SMA 6-pins 22 nH 1.14 mm x 0.8 mm x 10.95 mm 1.14 mm x 0.8 mm x 10.8 mm 1.14 mm x 0.8 mm x 5.8 mm 1.14 mm x 0.8 mm x 2.5 mm 1.14 mm x 0.8 mm x 3.5 mm DC feed input match input match output match output match output match Function DC blocking input match output match RF decoupling DC decoupling DC decoupling Remarks Murata GRM1885C1H150JA01D Murata GRM1885C1H2R7CZ01D Murata GRM1885C1H1R5CZ01D Murata GRM1885C1H150JA01D AVX 0603YC104KAT2A AVX 1206ZG106ZAT2A Emerson Network Power 142-0701-841 MOLEX Tyco electronics 36501J022JTDG
BGA7124_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
18 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 16. 5 V/130 mA application list of components; 2110 MHz to 2170 MHz ...continued See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component Description MSL6[1] R1 R2 micro stripline resistor resistor (trimmer) Value 1.14 mm x 0.8 mm x 10.95 mm 0 2 k bias adjustment Function output match Multicomp MC 0.063W 0603 0R Bourns 3214W-1-202E Remarks
[1]
MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L).
12.1.4 2405 MHz to 2485 MHz
R1 C7
VCC
J3
C8
C6
VCC(BIAS)
50 J1 C2 MSL1 C1 MSL2
L1
RF_IN
VCC(RF)
MSL3
MSL4
C5
MSL5
50 J2
RF_OUT
BGA7124
ICQ_ADJ
R2
C3
C4
SHDN
014aab069
enable
See Table 17 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 23. 5 V/130 mA application schematic; 2405 MHz to 2485 MHz
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
19 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
26 PL(1dB) (dBm) 24
014aab070
20 Gp (dB) 18
014aab071
(3) (2) (1)
22
16
(1) (2)
20
14
(3)
18
12
16 2.405
2.425
2.445
2.465 2.485 f (GHz)
10 2.405
2.425
2.445
2.465 2.485 f (GHz)
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 24. Output power at 1 dB gain compression as a function of frequency
Fig 25. Power gain as a function of frequency
0 RLin, RLout, ISL (dB) -10 RLin
014aab072
38 IP3O (dBm)
(3)
014aab073
36
(2)
(1)
-20
34 ISL RLout
-30 2.405
2.425
2.445
2.465 2.485 f (GHz)
32 2.405
2.425
2.445
2.465 2.485 f (GHz)
Tcase = 25 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 26. Input return loss, output return loss and isolation as a function of frequency
Fig 27. Output third-order intercept point as a function of frequency
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
20 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
enable
GND
GND
GND
VCC
n.c.
J3
C8 R1 C7 J1 C6 L1 MSL1 C1 MSL2 C2 J I HGF EDCBA MSL3 C3 MSL4 C4 C5 MSL5 J2
1 2 3 4 5 6 7 8 9 10 12 11 13
RF in
RF out
R2
014aab074
See Table 17 for a list of components.
Fig 28. 5 V/130 mA application reference board; 2405 MHz to 2485 MHz Table 17. 5 V/130 mA application list of components; 2405 MHz to 2485 MHz See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component Description C1, C5 C2 C3 C4 C6 C7 C8 J1, J2 J3 L1 MSL1[1] MSL2[1] MSL3[1] MSL4[1] capacitor capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor micro stripline micro stripline micro stripline micro stripline Value 12 pF 2.2 pF 0.82 pF 0.68 pF 12 pF 100 nF 10 F SMA 6-pins 22 nH 1.14 mm x 0.8 mm x 10.95 mm 1.14 mm x 0.8 mm x 10.8 mm 1.14 mm x 0.8 mm x 7.3 mm 1.14 mm x 0.8 mm x 4.3 mm DC feed input match input match output match output match Function DC blocking input match output match output match RF decoupling DC decoupling DC decoupling Remarks Murata GRM1885C1H120JA01D Murata GRM1885C1H2R2CZ01D Murata GRM1885C1HR82CZ01D Murata GRM1885C1HR68CZ01D Murata GRM1885C1H120JA01D AVX 0603YC104KAT2A AVX 1206ZG106ZAT2A Emerson Network Power 142-0701-841 MOLEX Tyco electronics 36501J022JTDG
BGA7124_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
21 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 17. 5 V/130 mA application list of components; 2405 MHz to 2485 MHz ...continued See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component Description MSL5[1] R1 R2
[1]
Value 1.14 mm x 0.8 mm x 10.95 mm 2.2 2 k
Function output match
Remarks Multicomp MC 0.063W 0603 2R2
micro stripline resistor resistor (trimmer)
bias adjustment Bourns 3214W-1-202E
MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L).
12.2 3.3 V applications
12.2.1 920 MHz to 960 MHz
J3
R1 C8
VCC
C9 C7
VCC(BIAS)
50 MSL1 C1 MSL2 MSL3
L2
J1
C2 C3
RF_IN
VCC(RF)
MSL4
L1
MSL5
MSL6
MSL7
C6
MSL8
50
J2 RF_OUT
C4 C5
BGA7124
ICQ_ADJ
R2
SHDN
enable
014aab075
See Table 18 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.
Fig 29. 3.3 V/130 mA application schematic; 920 MHz to 960 MHz
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
22 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
30 PL(1dB) (dBm) 28
014aab076
28 Gp (dB) 26
014aab077
(1)
26
(1) (2)
24
(2)
24
22
(3)
(3)
22
20
20 0.92
0.93
0.94
0.95 f (GHz)
0.96
18 0.92
0.93
0.94
0.95 f (GHz)
0.96
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 30. Output power at 1 dB gain compression as a function of frequency
Fig 31. Power gain as a function of frequency
0 RLin, RLout, ISL (dB) -10 RLout RLin
014aab078
40 IP3O (dBm) 38
014aab079
-20
36
(2) (3) (1)
ISL -30 0.92 0.93 0.94 0.95 f (GHz) 0.96 34 0.92 0.93 0.94 0.95 f (GHz) 0.96
Tcase = 25 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 32. Input return loss, output return loss and isolation as a function of frequency
Fig 33. Output third-order intercept point as a function of frequency
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
23 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
enable
GND
GND
GND
VCC
n.c.
J3
C9 R1 C8 J1 MSL2 MSL4 C7 MSL6 MSL7 L2 MSL1 C1 C2 C3 MSL3 J I HGF EDCBA L1 C4 C5 1 2 3 4 5 6 7 8 9 10 12 11 13 MSL5 C6 MSL8 J2
RF in
RF out
R2
014aab080
See Table 18 for a list of components.
Fig 34. 3.3 V/130 mA application reference board; 920 MHz to 960 MHz Table 18. 3.3 V/130 mA application list of components; 920 MHz to 960 MHz See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component Description C1, C6 C2, C3 C4 C5 C7 C8 C9 J1, J2 J3 L1 L2 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1]
BGA7124_1
Value 68 pF 3.3 pF 3.9 pF 1.0 pF 68 pF 100 nF 10 F SMA 6-pins 2.2 nH 22 nH 1.14 mm x 0.8 mm x 10.95 mm 1.14 mm x 0.8 mm x 2.95 mm 1.14 mm x 0.8 mm x 7.75 mm 1.14 mm x 0.8 mm x 23.4 mm 1.14 mm x 0.8 mm x 2.2 mm
Function DC blocking input match output match output match RF decoupling DC decoupling DC decoupling
Remarks Murata GRM1885C1H680JA01D Murata GRM1885C1H3R3CZ01D Murata GRM1885C1H3R9CZ01D Murata GRM1885C1H1R0CZ01D Murata GRM1885C1H680JA01D AVX 0603YC104KAT2A AVX 1206ZG106ZAT2A Emerson Network Power 142-0701-841 MOLEX
capacitor capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor inductor micro stripline micro stripline micro stripline micro stripline micro stripline
output match DC feed input match input match input match output match output match
Tyco electronics 36501J2N2JTDG Tyco electronics 36501J022JTDG
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
24 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 18. 3.3 V/130 mA application list of components; 920 MHz to 960 MHz ...continued See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 m. Component Description MSL6[1] MSL7[1] MSL8[1] R1 R2
[1]
Value 1.14 mm x 0.8 mm x 2.4 mm 1.14 mm x 0.8 mm x 2.3 mm 1.14 mm x 0.8 mm x 10.95 mm 0
Function output match output match output match
Remarks
micro stripline micro stripline micro stripline resistor
Multicomp MC 0.063W 0603 0R bias adjustment Bourns 3214W-1-202E
resistor (trimmer) 2 k
MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L).
12.2.2 2405 MHz to 2485 MHz
J3 R1 C7
VCC
C8 C6
VCC(BIAS)
50 J1 C2 MSL1 C1 MSL2
L1
RF_IN
VCC(RF)
MSL3
MSL4
C5
MSL5
50 J2
RF_OUT
BGA7124
ICQ_ADJ
R2
C3
C4
SHDN
enable
014aab081
See Table 19 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m
Fig 35. 3.3 V/130 mA application schematic; 2405 MHz to 2485 MHz
BGA7124_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
25 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
26 PL(1dB) (dBm) 24
014aab082
20 Gp (dB) 18
014aab083
(3) (2)
22
(1)
16
(1) (2)
20
14
(3)
18
12
16 2.405
2.425
2.445
2.465 2.485 f (GHz)
10 2.405
2.425
2.445
2.465 2.485 f (GHz)
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 36. Output power at 1 dB gain compression as a function of frequency
Fig 37. Power gain as a function of frequency
0 RLin, RLout, ISL (dB) RLin -10
014aab084
38 IP3O (dBm)
014aab085
36
(2) (1) (3)
-20 ISL
34
RLout -30 2.405 32 2.405
2.425
2.445
2.465 2.485 f (GHz)
2.425
2.445
2.465 2.485 f (GHz)
Tcase = 25 C.
(1) Tcase = -40 C. (2) Tcase = 25 C. (3) Tcase = 85 C.
Fig 38. Input return loss, output return loss and isolation as a function of frequency
Fig 39. Output third-order intercept point as a function of frequency
BGA7124_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
26 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
enable
GND
GND
GND
VCC
n.c.
J3
C8 R1 C7 J1 C6 L1 MSL1 C1 MSL2 C2 J I HGF EDCBA MSL3 C3 MSL4 C4 C5 MSL5 J2
1 2 3 4 5 6 7 8 9 10 12 11 13
RF in
RF out
R2
014aab086
See Table 19 for a list of components.
Fig 40. 3.3 V/130 mA application reference board; 2405 MHz to 2485 MHz Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 mm. Component Description Component C1, C5 C2 C3 C4 C6 C7 C8 J1, J2 J3 L1 MSL1[1] MSL2[1] MSL3[1] MSL4[1] Description capacitor capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor micro stripline micro stripline micro stripline micro stripline Value Value 12 pF 2.2 pF 0.82 pF 0.68 pF 12 pF 100 nF 10 F SMA 6-pins 22 nH 1.14 mm x 0.8 mm x 10.8 mm 1.14 mm x 0.8 mm x 7.3 mm 1.14 mm x 0.8 mm x 4.3 mm DC feed input match output match output match 1.14 mm x 0.8 mm x 10.95 mm input match Function Function DC blocking input match output match output match RF decoupling DC decoupling DC decoupling Remarks Remarks Murata GRM1885C1H120JA01D Murata GRM1885C1H2R2CZ01D Murata GRM1885C1HR82CZ01D Murata GRM1885C1HR68CZ01D Murata GRM1885C1H120JA01D AVX 0603YC104KAT2A AVX 1206ZG106ZAT2A Emerson Network Power 142-0701-841 MOLEX Tyco electronics 36501J022JTDG
BGA7124_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
27 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz ...continued See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 mm. Component Description MSL5[1] R1 R2
[1]
Value 2.2
Function
Remarks Multicomp MC 0.063W 0603 2R2
micro stripline resistor
1.14 mm x 0.8 mm x 10.95 mm output match bias adjustment Bourns 3214W-1-202E
resistor (trimmer) 2 k
MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L).
12.3 PCB stack
through via RF and analog routing 35 m (1 oz.) copper + 0.3 m gold plating
RO4003C, 0.51 mm (20 mil)
RF and analog ground
35 m (1 oz.) copper
(1) 0.2 mm (8 mil)
analog routing
35 m (1 oz.) copper FR4, 0.15 mm (6 mil) 35 m (1 oz.) copper
014aab087
RF and analog ground
(1) Pre-pregnated RO4003Cdielectric constant r = 3.38
Fig 41. PCB stack
BGA7124_1
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
28 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
13. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm
SOT908-1
0
1 scale
2 mm
X
D
B
A
E
A A1 c detail X
terminal 1 index area terminal 1 index area
1
e1 e b
4
v w
M M
CAB C
C y1 C y exposed tie bar (4x)
L
Eh
exposed tie bar (4x)
8
5
Dh
DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.3 0.2 c 0.2 D(1) 3.1 2.9 Dh 2.25 1.95 E(1) 3.1 2.9 Eh 1.65 1.35 e 0.5 e1 1.5 L 0.5 0.3 v 0.1 w 0.05 y 0.05 y1 0.1
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT908-1 REFERENCES IEC JEDEC MO-229 JEITA EUROPEAN PROJECTION ISSUE DATE 05-09-26 05-10-05
Fig 42. Package outline SOT908-1 (HVSON8)
BGA7124_1 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
29 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
14. Abbreviations
Table 20. Acronym CPE DC ESD HTOL ISM MMIC MoCA RFID SMA TX WLAN Abbreviations Description Customer-Premises Equipment Direct Current ElectroStatic Discharge High Temperature Operating Life Industrial, Scientific and Medical Monolithic Microwave Integrated Circuit Multimedia over Coax Alliance Radio Frequency IDentification SubMiniature version A Transmit Wireless Local Area Network
15. Revision history
Table 21. Revision history Release date 20100421 Data sheet status Product data sheet Change notice Supersedes Document ID BGA7124_1
BGA7124_1
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Product data sheet
Rev. 01 -- 21 April 2010
30 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
(c) NXP B.V. 2010. All rights reserved.
16.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
BGA7124_1
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 01 -- 21 April 2010
31 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BGA7124_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 21 April 2010
32 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
18. Contents
1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 8.1 9 9.1 10 11 12 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.2 12.2.1 12.2.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Supply current adjustment . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Scattering parameters . . . . . . . . . . . . . . . . . . . 9 Reliability information . . . . . . . . . . . . . . . . . . . 10 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 11 5 V applications . . . . . . . . . . . . . . . . . . . . . . . 11 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 11 1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . 14 2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 16 2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 19 3.3 V applications . . . . . . . . . . . . . . . . . . . . . . 22 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 22 2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 25 PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 29 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 30 Legal information. . . . . . . . . . . . . . . . . . . . . . . 31 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 31 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Contact information. . . . . . . . . . . . . . . . . . . . . 32 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 April 2010 Document identifier: BGA7124_1


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